Micron has abandoned its plans to manufacture 4F2 DRAM cells, a move that diverges from the strategies of rivals Samsung, SK hynix and CXMT, according to a report by Tom's Hardware.reported
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
What was released or claimed
Scott DeBoer, Micron's president and chief technology and products officer, stated that DRAM is approaching atomic limits, making the transition to 3D DRAM necessary for optimal cost and performance.reported The company confirmed it is focusing on new materials to densify NAND cell architecture and continuing XYZ scaling for 3D NAND.reported
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
Who it affects
AI developers who require memory and storage solutions optimized for unique processor architectures and specific workloads are the primary beneficiaries of Micron's expanded portfolio of custom DRAM and NAND products.
What is still unknown
The material does not specify the exact timeline for the mass production of the two generations of 3D DRAM currently under development, only that they could eventually succeed conventional planar memory.reported
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
What to make of it
Micron's decision to skip 4F2 in favor of High-NA EUV lithography and wafer bonding suggests a strategic pivot away from planar node competition toward structural innovation and custom silicon solutions.reported
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
What buyers should weigh
Buyers should consider that Micron's 1-delta process enters mass production in the second half of 2027, while its current 1-gamma process is already in high-volume manufacturing.reported The shift toward custom silicon means standard off-the-shelf memory may become less optimal for specialized AI workloads, requiring closer vendor collaboration.
Evidence: reported
Micron details ambitious DRAM and NAND roadmap — 3D NAND, High-NA EUV, new materials, and custom silicon makes a comebackaifleet-tomshardware
Why it matters
- The cancellation of 4F2 DRAM plans signals a potential supply chain shift for buyers relying on standard planar node upgrades from Micron.
- The emphasis on custom silicon suggests that AI infrastructure procurement will increasingly require bespoke memory solutions rather than generic components.
- The timeline for 1-delta mass production in late 2027 provides a concrete milestone for capacity planning and technology adoption cycles.
- The adoption of High-NA EUV lithography indicates a significant capital investment in manufacturing capabilities that may affect long-term pricing structures.
Updated
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Why did Micron cancel its 4F2 DRAM plans?
Micron cited the lack of a viable scaling path beyond its current technology and the approach of atomic limits for DRAM cells.
When will Micron mass-produce its 1-delta memory?
Micron plans to begin mass production of its 1-delta memory in the second half of 2027.
Reading receipt
- Micron cancels its 4F2 DRAM production plans due to scaling limits.
- The company will mass-produce 1-delta memory in late 2027.
- Custom DRAM and NAND products will expand to serve specific AI architectures.